Improving RF CMOS active inductor by simple loss compensation network

Chen-Yi Lee*, Jyh Neng Yang, Yi Chang Cheng

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

An RF CMOS active inductor with a novel loss compensation circuit network is proposed. Performance of this active inductor can be improved by adding a novel network, which simultaneously reduces parallel and series losses. Consequently, this technique not only increases Q value, inductance, and operating frequency, but also reduces power consumption and circuit complexity. Simulation results show that better performance indices can be achieved, such as minimum total equivalent loss of 1 mΩ, maximum Q value about 3E5, and inductance value from 20 nH to 45 nH in the RF range of 0.6 GHz to 1.6 GHz. Power dissipation is around 1.76 mW under 2.5 V dc supply voltage.

Original languageEnglish
Pages (from-to)1681-1683
Number of pages3
JournalIEICE Transactions on Communications
VolumeE87-B
Issue number6
StatePublished - 1 Jan 2004

Keywords

  • Active inductor
  • Inductance
  • Internal loss
  • Power dissipation
  • Q value

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