Improving resistance switching characteristics with SiGeO x/SiGeON double layer for nonvolatile memory applications

Yong En Syu*, Ting Chang Chang, Chih Tsung Tsai, Geng Wei Chang, Tsung Ming Tsai, Kuan Chang Chang, Ya-Hsiang Tai, Ming Jinn Tsai, Simon M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

The switching layer with SiGeOx/SiGeON structure is investigated to improve the electrical characteristics of resistive nonvolatile memory. A bipolar resistance switching behavior owning inferior stability was observed in Pt/SiGeOx/TiN memory cells. To obtain practical memory, a convenient and compatible SiGeON (∼5 nm) is introduced at SiGeOx/anode interface to stabilize the disruption length of filaments near anode electrode. Compared with Pt/SiGeOx/TiN memory cells, the proposed Pt/SiGeO x/SiGeON/TiN cells is effective at minimizing the dispersions of memory switching parameters.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume14
Issue number10
DOIs
StatePublished - 18 Aug 2011

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