Improving Photoelectric Energy Conversion by structuring Si Surfaces with Ge Quantum Dots

Volodymyr Shmid, Vasyl Kuryliuk, Andriy Nadtochiy, Oleg Korotchenkov, Pei Wen Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Structuring Si surfaces with Ge quantum dots can have a beneficial effect on the photovoltage (PV), increasing the PV magnitude and decay time. The origin of this behavior is intimately related to mechanical strains developed in the vicinity of the Ge/Si interface. The structuring is a promising means of avoiding the uncontrolled production of recombination centers and offering significant enhancement of the recombination lifetime due to carrier trapping in the dots. This work can open new opportunities for advanced photoelectric devices with recombination center free nanostructures.

Original languageEnglish
Title of host publication2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages92-96
Number of pages5
ISBN (Electronic)9781728120652
DOIs
StatePublished - Apr 2019
Event39th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2019 - Kyiv, Ukraine
Duration: 16 Apr 201918 Apr 2019

Publication series

Name2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings

Conference

Conference39th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2019
CountryUkraine
CityKyiv
Period16/04/1918/04/19

Keywords

  • carrier separation
  • carrier trapping
  • decay time
  • photovoltage
  • SiGe

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    Shmid, V., Kuryliuk, V., Nadtochiy, A., Korotchenkov, O., & Li, P. W. (2019). Improving Photoelectric Energy Conversion by structuring Si Surfaces with Ge Quantum Dots. In 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings (pp. 92-96). [8783352] (2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ELNANO.2019.8783352