Improving performance of InGaN/GaN light-emitting diodes and GaAs solar cells using luminescent gold nanoclusters

J. L. Shen, M. D. Yang, S. W. Wu, G. W. Shu, J. S. Wang, C. H. Wu, C. A.J. Lin, Chang, T. Y. Lin, Tien-Chang Lu, Hao-Chung Kuo

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We studied the optoelectronic properties of the InGaN/GaN multiple-quantum-well light emitting diodes (LEDs) and single-junction GaAs solar cells by introducing the luminescent Au nanoclusters. The electroluminescence intensity for InGaN/GaN LEDs increases after incorporation of the luminescent Au nanoclusters. An increase of 15.4 in energy conversion efficiency is obtained for the GaAs solar cells in which the luminescent Au nanoclusters have been incorporated. We suggest that the increased light coupling due to radiative scattering from nanoclusters is responsible for improving the performance of the LEDs and solar cells.

Original languageEnglish
Article number840791
Pages (from-to)1-5
Number of pages5
JournalJournal of Nanomaterials
Volume2009
DOIs
StatePublished - 11 Nov 2009

Fingerprint Dive into the research topics of 'Improving performance of InGaN/GaN light-emitting diodes and GaAs solar cells using luminescent gold nanoclusters'. Together they form a unique fingerprint.

Cite this