Improving Interface State Density of TiN/HfO2/IL Gate Stack on Si0.5Ge0.5by Optimization of Post Metallization Annealing and Oxygen Pressure

Meng Chien Lee*, Wei Li Lee, Cheng Yu Yu, Hung Ju Lin, Hsien Ho Liu, Jun Lin Zhang, Shin Yuan Wang, Chen Han Chou, Guang Li Luo, Chao Hsin Chien

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, we fabricated TiN/HfO2-based gate stacks on epi- Si0.5 Ge0.5 substrates with remarkably low interface trap density (Dit) by optimizing the temperature and pressure in the annealing ambient. We found that oxygen in ambient play a subtle role in the resultant properties of the gate stack. During annealing, insufficient oxygen supply to the stack cannot effectively repair the slow oxide traps, while too much oxygen will cause excess SiGe surface oxidation and lead to higher Dit. For the first time, the impact of diffused oxygen during thermal processing on the electrical properties of the TiN/HfO2/IL/SiGe gate stack is systematically investigated.

Original languageEnglish
Title of host publication2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages102-103
Number of pages2
ISBN (Electronic)9781728142326
DOIs
StatePublished - Aug 2020
Event2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 - Hsinchu, Taiwan
Duration: 10 Aug 202013 Aug 2020

Publication series

Name2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

Conference

Conference2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
CountryTaiwan
CityHsinchu
Period10/08/2013/08/20

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