Improving electrical properties of bottom-gate poly(3-hexylthiophene) thin-film transistor using CF4 plasma treatment

Hung Chi Wu*, Chao-Hsin Chien

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this letter, the effect of CF4 plasma treatment on poly(3-hexylthiophene)-based organic thin-film transistors has been investigated. It was found that CF4 plasma treatment on the source/drain electrode can reduce contact resistance and increase mobility. The CF4 plasma treatment can increase the mobility from 0.0021 to 0.0102 cm2Vs and decrease the contact resistance by about 70%. Moreover, the CF4 plasma treatment is compatible with the bottom-gate bottom-contact structure without degrading the SiO2 layer.

Original languageEnglish
Article number6471742
Pages (from-to)538-540
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number4
DOIs
StatePublished - 11 Mar 2013

Keywords

  • Organic thin-film transistors (OTFTs)
  • plasma treatment
  • poly(3-hexylthiophene) (P3HT)

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