A novel T-shaped-gated (T-Gate) polycrystalline silicon thin-film transistor (poly-Si TFT) with in-situ vacuum gaps has been proposed and fabricated with a simple process. The T-Gate structure is formed only by a selective undercut-etching technology of the Mo/Al bi-layers. Then, vacuum gaps are in-situ embedded in this T-Gate structure subsequent to capping the SiH 4 -based passivation oxide under the vacuum process chamber. The proposed T-Gate poly-Si TFT has demonstrated to suppress the short-channel effects by simulated and measured characterization. It is attributed to the undoped offset region and vacuum gap to reduce the maximum electric field at drain junction.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|State||Published - 30 Oct 2008|
|Event||2008 SID International Symposium - Los Angeles, CA, United States|
Duration: 20 May 2008 → 21 May 2008