Improving electrical characteristics of High-k NiTiO dielectric with nitrogen ion implantation

Wen Luh Yang*, Tien-Sheng Chao, Shine China Chen, Chin Hao Yang, Wu Chin Peng

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

A new high-dielectric-constant (k) NiTiO dielectric film with a low temperature has been investigated for the first time. The k of the NiTiO film was estimated to be larger than 40. The roughness of the NiTiO dielectric film to nitrogen ion implantation (I/I) was uniform, thus causing a low leakage current (<10-9 A) and a high breakdown voltage (<25 MV/cm 2). These results are superior to those reported in the literature, suggesting a potential use of the NiTiO film as dielectric for future RF/mixed IC applications.

Original languageEnglish
Pages (from-to)6902-6904
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number9 A
DOIs
StatePublished - 7 Sep 2006

Keywords

  • High-k
  • MIM
  • NiTiO

Fingerprint Dive into the research topics of 'Improving electrical characteristics of High-k NiTiO dielectric with nitrogen ion implantation'. Together they form a unique fingerprint.

Cite this