Improving efficiency of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors

Yu Lin Tsai, Chien-Chung Lin, Hau Vei Han, Chun Kai Chang, Hsin Chu Chen, Kuo Ju Chen, Wei Chi Lai, Jin Kong Sheu, Fang I. Lai, Pei-Chen Yu, Hao-Chung Kuo*

*Corresponding author for this work

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

This work demonstrates hybrid InGaN/GaN multiple quantum well (MQW) solar cells with enhanced power conversion efficiency using colloidal CdS quantum dots (QDs) and back-side distributed Bragg reflectors (DBRs). CdS QDs can absorb ultraviolet (UV) photons, which are strongly absorbed by indium tin oxide (ITO), and they emit photons with a longer wavelength. This process improves the collection of photon-generated carriers and is known as the luminescence down-shifting (LDS). Accordingly, CdS QDs can compensate for the poor utilization of UV photons in an ITO layer, enhancing the external quantum efficiency (EQE) in the UV range. The DBRs on the back of the solar cells can reflect photons of longer wavelengths back into the absorber layer, increasing the EQE (380-440 nm). The combination of CdS QDs and DBRs results in broadband EQE enhancement, and yields an overall power conversion efficiency that is 20.7% better than that of a reference device without CdS QDs and DBRs.

Original languageEnglish
Pages (from-to)531-536
Number of pages6
JournalSolar Energy Materials and Solar Cells
Volume117
DOIs
StatePublished - 26 Aug 2013

Keywords

  • Anti-reflection
  • InGaN multiple quantum well solar cells
  • Luminescent down shifting
  • Quantum dots

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