Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array

Gong Ru Lin*, Chun Jung Lin, Hao-Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

88 Scopus citations

Abstract

A silicon-nanocrystal (nc-Si) based metal-oxide-semiconductor light-emitting diode (MOSLED) on Si nanopillar array with size, height, and density of 30 nm, 350 nm, and 2.8× 1010 cm-2, respectively, is characterized. The nanopillar roughened Si surface contributes to the improved turn-on characteristics by enhancing Fowler-Nordheim tunneling and reducing effective barrier height, providing the MOSLED a maximum optical power of 0.7 μW obtained at biased current of 375 μA. The optical intensity, turn-on current, and power-current slope of nc-Si MOSLED on high-aspect-ratio Si nanopillar array are 140 μW cm2, 5 μA, 2±0.8 mWA, respectively. A maximum external quantum efficiency of 0.1% is reported.

Original languageEnglish
Article number093122
JournalApplied Physics Letters
Volume91
Issue number9
DOIs
StatePublished - 7 Sep 2007

Fingerprint Dive into the research topics of 'Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array'. Together they form a unique fingerprint.

Cite this