TY - JOUR
T1 - Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array
AU - Lin, Gong Ru
AU - Lin, Chun Jung
AU - Kuo, Hao-Chung
PY - 2007/9/7
Y1 - 2007/9/7
N2 - A silicon-nanocrystal (nc-Si) based metal-oxide-semiconductor light-emitting diode (MOSLED) on Si nanopillar array with size, height, and density of 30 nm, 350 nm, and 2.8× 1010 cm-2, respectively, is characterized. The nanopillar roughened Si surface contributes to the improved turn-on characteristics by enhancing Fowler-Nordheim tunneling and reducing effective barrier height, providing the MOSLED a maximum optical power of 0.7 μW obtained at biased current of 375 μA. The optical intensity, turn-on current, and power-current slope of nc-Si MOSLED on high-aspect-ratio Si nanopillar array are 140 μW cm2, 5 μA, 2±0.8 mWA, respectively. A maximum external quantum efficiency of 0.1% is reported.
AB - A silicon-nanocrystal (nc-Si) based metal-oxide-semiconductor light-emitting diode (MOSLED) on Si nanopillar array with size, height, and density of 30 nm, 350 nm, and 2.8× 1010 cm-2, respectively, is characterized. The nanopillar roughened Si surface contributes to the improved turn-on characteristics by enhancing Fowler-Nordheim tunneling and reducing effective barrier height, providing the MOSLED a maximum optical power of 0.7 μW obtained at biased current of 375 μA. The optical intensity, turn-on current, and power-current slope of nc-Si MOSLED on high-aspect-ratio Si nanopillar array are 140 μW cm2, 5 μA, 2±0.8 mWA, respectively. A maximum external quantum efficiency of 0.1% is reported.
UR - http://www.scopus.com/inward/record.url?scp=34548451162&partnerID=8YFLogxK
U2 - 10.1063/1.2778352
DO - 10.1063/1.2778352
M3 - Article
AN - SCOPUS:34548451162
VL - 91
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 9
M1 - 093122
ER -