Improvements of AlGaN/GaN p-i-n UV sensors with graded AlGaN layer for the UV-B (280-320 nm) detection

Su Sir Liu, Pei-Wen Li, W. H. Lan, Wen Jen Lin

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

AlxGa1-xN/GaN p-i-n UV sensors grown by metal organic chemical vapor deposition (MOCVD) were fabricated for the UV-B (280-320 nm) detection. With a proper structure design by including a thin top p-layer and a graded AlxGa1-xN (x = 0.26 → 0.13) layer, the etching pit density (EPD) and the specific contact resistance of top p-layer can be significantly decreased. Device dark current density decreased from 3.5 × 10-7 to 2.49 × 10-11 A/cm2 at -3V and the spectrum responsivity at 310 nm UV-B range is 0.04 A/W, which is much better than traditional AlGaN-based devices without graded layer design.

Original languageEnglish
Pages (from-to)196-200
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume122
Issue number3
DOIs
StatePublished - 25 Sep 2005

Keywords

  • Responsivity
  • SIMS
  • UV sensor

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