Improvements in the reliability of a-InGaZnO thin-film transistors with triple stacked gate insulator in flexible electronics applications

Hua Mao Chen, Ting Chang Chang*, Ya-Hsiang Tai, Kuan Fu Chen, Hsiao Cheng Chiang, Kuan Hsien Liu, Chao Kuei Lee, Wei Ting Lin, Chun Cheng Cheng, Chun Hao Tu, Chu Yu Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

This study examined the impact of the low-temperature stacking gate insulator on the gate bias instability of a-InGaZnO thin film transistors in flexible electronics applications. Although the quality of SiNx at low process/deposition temperature is better than that of SiOx at similarly low process/deposition temperature, there is still a very large positive threshold voltage (Vth) shift of 9.4 V for devices with a single low-temperature SiNx gate insulator under positive gate bias stress. However, a suitable oxide–nitride–oxide-stacked gate insulator exhibits a Vth shift of only 0.23 V. This improvement results from the larger band offset and suitable gate insulator thickness that can effectively suppress carrier trapping behavior.

Original languageEnglish
Pages (from-to)176-180
Number of pages5
JournalThin Solid Films
Volume595
DOIs
StatePublished - 1 Nov 2015

Keywords

  • Flexible electronics
  • InGaZnO
  • Low temperature process
  • Oxide–nitride–oxide layers
  • PECVD

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