Improvements in the heteroepitaxy of GaAs on Si by incorporating a ZnSe buffer layer

M. K. Lee*, Ray-Hua Horng, D. S. Wuu, P. C. Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

Heteroepitaxy of GaAs on Si with a ZnSe interlayer by low-pressure metalorganic chemical vapor deposition is reported. The structural and electrical properties of the GaAs epilayers grown on ZnSe/Si substrates were found to be superior to those of the GaAs directly on Si. The surface dislocation density of the GaAs/ZnSe/Si film can be reduced to 2×10 5 cm-2, which is one order of magnitude lower than that of GaAs/Si. The planar Schottky diode fabricated on the GaAs/ZnSe/Si sample shows a reverse breakdown voltage as high as 30 V, whereas the diode on GaAs/Si has a breakdown voltage of about 12 V. In addition, the residual stress in the GaAs heteroepilayers calculated from photoluminescence peak shifts was 8.2×108 dyn/cm2 for the GaAs/ZnSe/Si structure, as compared to 2.7×109 dyn/cm2 for the GaAs directly on Si. This indicates that the ZnSe intermediate layer is also effective in reducing the residual stress in the GaAs film grown on Si.

Original languageEnglish
Pages (from-to)207-209
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number2
DOIs
StatePublished - 1 Dec 1991

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