Improvement on interface quality and reliability properties of HfAlO x MIS capacitor with dual plasma treatment

Kow-Ming Chang, Ting Chia Chang*, Po Chun Chang, Bo Wen Huang, Chien Hung Wu, I. Chung Deng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

HfO 2 is considered a promising gate dielectric material for sub-45 nm CMOS technology. It has been reported that incorporate Al into HfO 2 forming Hf aluminates in order to increase the crystallization temperature. However, the growth of the low-k interfacial layer at high-k/Si interface during high-k dielectric deposition would result in reliability degradation. Recently, incorporating nitrogen into HfAlO x gate dielectrics has beneficial effect on reliability performance. In addition, fluorine incorporation into high-k dielectrics also could have several improvements. In this study, dual plasma (CF 4 pre-treatment and N 2 post-treatment) was performed on HfAlO x MIS capacitor in order to improve interface quality and the reliability properties. According to our experimental results, dual plasma treatment could improve interface quality and enhance reliability properties of HfAlO x thin films.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems 5
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
Pages167-174
Number of pages8
Edition3
DOIs
StatePublished - 19 Nov 2012
Event5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States
Duration: 6 May 201210 May 2012

Publication series

NameECS Transactions
Number3
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period6/05/1210/05/12

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    Chang, K-M., Chang, T. C., Chang, P. C., Huang, B. W., Wu, C. H., & Deng, I. C. (2012). Improvement on interface quality and reliability properties of HfAlO x MIS capacitor with dual plasma treatment. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices (3 ed., pp. 167-174). (ECS Transactions; Vol. 45, No. 3). https://doi.org/10.1149/1.3700883