Improvement on ESD robustness of lateral DMOS in high-voltage CMOS ICs by body current injection

Wen Yi Chen*, Ming-Dou Ker, Yeh Ning Jou, Yeh Jen Huang, Geeng Lih Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations

Abstract

With the waffle layout style, body-injected technique implemented by body current injection on n-channel lateral DMOS (nLDMOS) has been successfully verified in a 0.5-μm 16-V BCD process. The TLP measured results confirmed that the secondary breakdown current (It2) of waffle nLDMOS can be significantly increased by the body current injection with the corresponding trigger circuit design. The latchup immunity of power-rail ESD protection circuit can be further improved by the stacked configuration with multiple nLDMOS devices in HV ICs.

Original languageEnglish
Title of host publication2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009
Pages385-388
Number of pages4
DOIs
StatePublished - 26 Oct 2009
Event2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009 - Taipei, Taiwan
Duration: 24 May 200927 May 2009

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Conference

Conference2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009
CountryTaiwan
CityTaipei
Period24/05/0927/05/09

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