Improvement on electrical characteristics of HfO2 MIS capacitor with dual plasma treatment

Kow-Ming Chang, Ting Chia Chang*, Hshu Wei Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

There have been some researches described that nitridation processes could improve thermal stability and dielectric constant of Hf-based dielectrics. The improvement of electrical characteristics of HfO2 thin films with plasma nitridation has been examined. Moreover, CF4 plasma treatment on HfO2 thin films in order to suppress leakage current and passivate defect were also proposed. In this study, we proposed to combine two kinds of plasma treatment, CF4 pre-treatment and nitrogen post-treatment, in order to have further improvement on electrical characteristics. The capacitance-voltage (C-V) characteristics, current-voltage (J-V) characteristics, and hysteresis of the samples were preformed to estimate the improvement effect. According to this study, dual plasma treatment would be an effective technology to improve the electrical characteristic and the hysteresis of pure HfO2 thin films.

Original languageEnglish
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications
Pages309-316
Number of pages8
Edition2
DOIs
StatePublished - 1 Aug 2011
EventSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications - 219th ECS Meeting - Montreal, QC, Canada
Duration: 2 May 20114 May 2011

Publication series

NameECS Transactions
Number2
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period2/05/114/05/11

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    Chang, K-M., Chang, T. C., & Chen, H. W. (2011). Improvement on electrical characteristics of HfO2 MIS capacitor with dual plasma treatment. In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications (2 ed., pp. 309-316). (ECS Transactions; Vol. 35, No. 2). https://doi.org/10.1149/13568874