Improvement of voltage linearity in high-κ MIM capacitors using HfO2-SiO2 stacked dielectric

Sun Jung Kim*, Byung Jin Cho, Ming Fu Li, Shi Jin Ding, Chunxiang Zhu, Ming Bin Yu, Babu Narayanan, Albert Chin, Dim Lee Kwong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

82 Scopus citations


It is demonstrated that the voltage coefficients of capacitance (VCC) in high-κ metal-insulator-metal (MIM) capacitors can be actively engineered and voltage linearity can be significantly improved maintaining high capacitance density, by using a stacked insulator structure of high-κ and SiO2 dielectrics. A MIM capacitor with capacitance density of 6 fFμm2 and quadratic VCC of only 14 ppm/V2 has been demonstrated together with excellent frequency and temperature dependence (temperature coefficients of capacitance of 54 ppm °C) as well as low leakage current of less than 10 nA/cm2 up to 4 V at 125 °C.

Original languageEnglish
Pages (from-to)538-540
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
StatePublished - 1 Aug 2004

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