Improvement of unipolar resistive switching characteristics in Ti embedded ZrO2 thin film

Chun Yang Huang, Umesh Chand, Tseung-Yuen Tseng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Due to the electrical and physical analyses, the robust negative voltage unipolar resistive switching behaviors in Ti/ZrO2/Ti/ZrO2/Pt device have been investigated. The Ti diffusion in ZrO2 film can generate more amounts of oxygen vacancies in it, which leads the lower value and narrower variation in forming voltage. Moreover, the good performances with more than 1000 switching cycles and long retention test can be achieved in the present device.

Original languageEnglish
Title of host publicationVehicle, Mechatronics and Information Technologies II
PublisherTrans Tech Publications
Pages3839-3842
Number of pages4
ISBN (Print)9783038350606
DOIs
StatePublished - 1 Jan 2014
EventInternational Conference on Vehicle and Mechanical Engineering and Information Technology, VMEIT 2014 - Beijing, China
Duration: 19 Feb 201420 Feb 2014

Publication series

NameApplied Mechanics and Materials
Volume543-547
ISSN (Print)1660-9336
ISSN (Electronic)1662-7482

Conference

ConferenceInternational Conference on Vehicle and Mechanical Engineering and Information Technology, VMEIT 2014
CountryChina
CityBeijing
Period19/02/1420/02/14

Keywords

  • Embedded
  • RRAM
  • Resistive switching
  • Ti
  • Unipolar

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