Improvement of ultra-thin 3.3 nm thick oxide for Co-salicide process using NF 3 annealed poly-gate

Tzu Yun Chang*, Tan Fu Lei, Tien-Sheng Chao, Cheng Tung Huang, Shi Kuan Chen, Andy Tuan, Steve Chou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

To get high quality ultra-thin oxide is very important and difficult for IC industry now. Using NF 3 annealed poly-Si gate to improve gate oxide integrity is described. However, reducing gate, source and drain parasitic resistance with gate lengths down to 0.2 μm is another key point. Co-salicide process can successfully reduce the gate resistance even for a gate length of 0.075 μm. Although, Co-salicide process has a leakage problem. Using NF 3 annealing to prevent Co diffusing into gate oxide is described too. Results show that the optimal NF 3 annealing significantly improves electrical characteristics of ultra-thin oxide and Co-salicide process in terms of leakage current and breakdown field, as compared to the samples without NF 3 annealing.

Original languageEnglish
Pages (from-to)2243-2246
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number4 B
DOIs
StatePublished - 1 Dec 1999

Keywords

  • Breakdown field
  • Co-sacilide
  • Leakage current
  • NF
  • Si-F and Si-N bonds
  • Tunneling mechanism
  • Ultra-thin oxide

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