Improvement of thermal stability of Ni silicide by al interlayer deposition

Takashi Shiozawa*, Koji Nagahiro, Kazuo Tsutsui, Parhat Ahmet, Kuniyuki Kakushima, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Thermal stability of Ni silicde formed on heavily doped N type Si (N +-Si) was inferior to that on P type Si. As a solution of the problem, we proposed a new technique in which a thin Al layer was deposited at the interface of Ni/Si. Sheet resistance maintained low value at higher silicidation temperatures by using this technique. This method was found to reduce phase transition form NiSi to NiSi2 at these higher temperatures on N +-Si substrates.

Original languageEnglish
Title of host publicationSemiconductor Technology, ISTC2007 - Proceedings of the 6th International Conference on Semiconductor Technology
Pages43-47
Number of pages5
StatePublished - 2006
Event6th International Conference on Semiconductor Technology, ISTC2007 - Shanghai, China
Duration: 18 Mar 200720 Mar 2007

Publication series

NameSemiconductor Technology, ISTC2007 - Proceedings of the 6th International Conference on Semiconductor Technology

Conference

Conference6th International Conference on Semiconductor Technology, ISTC2007
CountryChina
CityShanghai
Period18/03/0720/03/07

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