A new process to improve thermal stability of Ni silicide, so called PSMD (post silicidation metal doping) in which additive metals were introduced to pre-formed NiSi was proposed. In situ deposition of a thin Hf or Pt layer or. the NiSi layer resulted in improvement of thermal stability evaluated by sheet resistance and morphology in the following RTA process at higher temperatures.
|Title of host publication||ECS Transactions - 5th International Symposium on ULSI Process Integration|
|Number of pages||7|
|State||Published - 2007|
|Event||5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, United States|
Duration: 7 Oct 2007 → 12 Oct 2007
|Conference||5th International Symposium on ULSI Process Integration - 212th ECS Meeting|
|Period||7/10/07 → 12/10/07|