Improvement of resistive switching uniformity for Al-Zn-Sn-O-based memory device with inserting HfO2 layer

Po-Tsun Liu, Yang Shun Fan, Chun Ching Chen

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

This letter demonstrates the characteristics of a resistive switching memory [resistive random access memory (RRAM)] device with a bilayer structure of aluminum-zinc-tin-oxide (AZTO) and HfO2-film layers. As for the RRAM operation, the formation and rupture processes of the conductive filaments can be confined in the HfO2 layer with low-concentration oxygen vacancy. The resistive switching stability and electrical uniformity of bilayer AZTO/HfO2 RRAM device are obviously enhanced as compared with the one only with a single layer of AZTO film. In addition, a physical mechanism for uniformity improvement is proposed by the localized conduction of conducting filaments.

Original languageEnglish
Article number6936282
Pages (from-to)1233-1235
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number12
DOIs
StatePublished - 1 Dec 2014

Keywords

  • AZTO
  • localized conducting filament.
  • Resistive switching
  • RRAM

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