Improvement of resistive switching properties of Ti/ZrO2/Pt with embedded germanium

Chun An Lin, Debashis Panda, Tseung-Yuen Tseng

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

In this study, we construct the Ti/ZrO2/Ge(5nm)/ZrO2/Pt structures with various positions of embedded Ge in ZrO2 films. After depositing a Ge layer, a 600 °C rapid thermal annealing is carried out. Compared to other Ge positions, the lowest forming voltage and the most stable resistive behavior are observed in the cell with a Ge layer near the top electrode. The curve fitting of high resistance state and low resistance state shows that Schottky emission in reset process and the ionic conduction during set process. The improved switching properties could be related to the formation of Germanium oxide and the defect concentration reduction after annealing process.

Original languageEnglish
Title of host publicationAdvances in Multifunctional Materials and Systems II - A Collection of Papers Presented at the 10th Pacific Rim Conference on Ceramic and Glass Technology, PacRim 2013
Publisherwiley
Pages111-116
Number of pages6
ISBN (Electronic)9781118771402
ISBN (Print)9781118771273
DOIs
StatePublished - 1 Jan 2014
Event10th Pacific Rim Conference on Ceramic and Glass Technology, PacRim 2013 - Coronado, CA, United States
Duration: 2 Jun 20136 Jun 2013

Publication series

NameCeramic Transactions
Volume245
ISSN (Print)1042-1122

Conference

Conference10th Pacific Rim Conference on Ceramic and Glass Technology, PacRim 2013
CountryUnited States
CityCoronado, CA
Period2/06/136/06/13

Keywords

  • Embedded germanium
  • Forming voltage
  • Rapid thermal annealing
  • Resistive switching
  • Schottky emission

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