The stabilization of the resistive switching properties is necessary to realize the memory application of the SrZrO 3 (SZO)-based resistive switching devices. During continuous resistive switching cycle, broad variations of the resistive switching parameters of the SZO-based memory devices can be improved by a thin embedded Cr layer. The Cr metal layer is proposed to diffuse into and dope the SZO thin film to produce the space charge region, further reducing the effective resistive switching region. Hence, the good stabilization of the resistive switching properties can be obtained in the SZO films with embedded Cr layer.
- Nonvolatile memory (NVM)
- Resistive random access memory (RRAM)
- Resistive switching