Improvement of resistive switching characteristics in SrZrO 3 thin films with embedded Cr layer

Chih Yang Lin*, Meng Han Lin, Ming Chi Wu, Chen Hsi Lin, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

The stabilization of the resistive switching properties is necessary to realize the memory application of the SrZrO 3 (SZO)-based resistive switching devices. During continuous resistive switching cycle, broad variations of the resistive switching parameters of the SZO-based memory devices can be improved by a thin embedded Cr layer. The Cr metal layer is proposed to diffuse into and dope the SZO thin film to produce the space charge region, further reducing the effective resistive switching region. Hence, the good stabilization of the resistive switching properties can be obtained in the SZO films with embedded Cr layer.

Original languageEnglish
Pages (from-to)1108-1111
Number of pages4
JournalIEEE Electron Device Letters
Volume29
Issue number10
DOIs
StatePublished - 9 Oct 2008

Keywords

  • Nonvolatile memory (NVM)
  • Resistive random access memory (RRAM)
  • Resistive switching
  • SrZrO
  • Stabilization

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