Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing

Li Wei Feng, Chun-Yen Chang, Yao Feng Chang, Ting Chang Chang, Shin Yuan Wang, Shih Ching Chen, Chao Cheng Lin, Shih Cheng Chen, Pei-Wei Chiang

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Abstract

In this paper, the influence of a 600 degrees C rapid thermal annealing for 60 s on the improvements of resistance switching behaviors in a TiN/SiO2/FeOx/FePt structure is reported. It is found that besides the distinct reduction in memory switching parameters in forming voltage, set/reset voltages, and their dispersions, the resistance ratio of high-resistance state to low-resistance state is also enlarged after annealing. The effects of annealing on improving the resistance switching properties are discussed by x-ray diffraction and x-ray photon-emission spectra depth profile results. Additionally, good retention characteristics are exhibited in the annealed TiN/SiO2/FeOx/FePt resistance switching memory. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428777]
Original languageEnglish
Article number222108
JournalApplied Physics Letters
Volume96
Issue number22
DOIs
StatePublished - 31 May 2010

Keywords

  • iron alloys; iron compounds; platinum alloys; random-access storage; rapid thermal annealing; silicon compounds; titanium compounds; X-ray diffraction; X-ray photoelectron spectra
  • NONVOLATILE MEMORY; FILMS

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    Feng, L. W., Chang, C-Y., Chang, Y. F., Chang, T. C., Wang, S. Y., Chen, S. C., Lin, C. C., Chen, S. C., & Chiang, P-W. (2010). Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing. Applied Physics Letters, 96(22), [222108]. https://doi.org/10.1063/1.3428777