Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation

Chao Sung Lai*, Tien-Sheng Chao, Tan Fu Lei, Chung Len Lee, Tiao Yuan Huang, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A systematic study of the impact of the reliability of metal-oxide semiconductor field-effect transistors (MOSFETs) with N2O nitrided gate oxides and N2O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All data presented in this study involve substantially low thermal budget (850°C), making this N2O-related technology extremely attractive and promising for future scaled devices.

Original languageEnglish
Pages (from-to)5507-5509
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number10
DOIs
StatePublished - 1 Oct 1998

Keywords

  • Antenna effect
  • NO
  • Polysilicon gate reoxidation
  • Reverse short channel effect

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