Improvement of reliability for polycrystalline thin-film transistors using self-aligned fluorinated silica glass spacers

Chun Hao Tu*, Ting Chang Chang, Po-Tsun Liu, Hsiao-Wen Zan, Ya-Hsiang Tai, Li Wei Feng, Yung Chun Wu, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Polycrystalline silicon thin-film transistors (poly-Si TFTs) with self-aligned fluorine-doped SiO2 (FSG) spacer were investigated in this study. The presence of FSG spacers can effectively reduce the lateral electrical field near the drain side of a poly-Si TFT device, and strongly passivate Si dangling bonds at the grain boundaries. The significant enhancement in electrical performance suppresses serious kink effect and improves electrical reliability of poly-Si TFTs effectively. In addition, the proposed poly-TFT structure is uncomplicated and compatible with existing TFT manufacturing processes.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume8
Issue number8
DOIs
StatePublished - 14 Sep 2005

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