Improvement of polysilicon oxide integrity using NF3-annealing

Wen Luh Yang*, Ming Sun Shieh, Yu Min Chen, Tien-Sheng Chao, Don Gey Liu, Tan Fu Lei

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

A new method that uses NF3-annealing improves the polysilicon oxide integrity. By using optimized NF3 flow-rate, the method provides the advantages of both N and F simultaneously by incorporating stronger Si-N and Si-F bonds at the polysilicon/polyoxide interface. Significant improvements in terms of roughness, breakdown strength, charge-to-breakdown, and stress-induced leakage current have been demonstrated.

Original languageEnglish
Pages (from-to)L562-L563
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume39
Issue number6 B
DOIs
StatePublished - 15 Jun 2000

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