Improvement of polysilicon oxide by growing on polished polysilicon film

Tan Fu Lei*, Juing Yi Cheng, Shyh Yin Shiau, Tien-Sheng Chao, Chao Sung Lai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

This letter first reports the characteristics of polyoxide that was thermally grown on polished polysilicon film. Compared to conventional polyoxide, polyoxide grown on polished polysilicon film exhibits lower leakage current, higher dielectric breakdown field, larger effective barrier height, and higher charge-to-breakdown. This simple and well-operated process provides a very promising option for the interpolysilicon oxide.

Original languageEnglish
Pages (from-to)270-271
Number of pages2
JournalIEEE Electron Device Letters
Volume18
Issue number6
DOIs
StatePublished - 1 Jun 1997

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