Improvement of polycrystalline silicon thin-film transistors with nickel-titanium oxide by sol-gel spin-coating and nitrogen implantation

Shih Chieh Wu*, Tuo-Hung Hou, Shiow Huey Chuang, Tien-Sheng Chao, Tan Fu Lei

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Polycrystalline silicon thin-film transistors (poly-Si TFTs) have attracted much attention because of the different applications, such as driving circuits of the active matrix liquid crystal displays (AM-LCDs) and those of the active matrix organic light emitting diode displays (AM-OLEDs) [1, 2]. Nickel-titanium oxide (NiTiO 3) deposited by physical vapor deposition was introduced to be a high dielectric constant material [3]. It has been reported that NiTiO 3 could be the gate dielectric of poly-Si TFTs by sol-gel spin-coating previously [4]. However, to improve the electrical performance and reliability of poly-Si TFTs, defect passivation such as hydrogen plasma treatment to create Si-H bonds is usually needed. Unfortunately, the weak Si-H bonds tend to degrade device reliability under long-term electrical operation. In this paper, high performance N-type poly-Si TFTs is demonstrated by taking advantage of the high- NiTiO 3 gate dielectric by sol-gel spin-coating and nitrogen ion implantation technique.

Original languageEnglish
Title of host publication2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs
StatePublished - 1 Dec 2011
Event2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
Duration: 7 Dec 20119 Dec 2011

Publication series

Name2011 International Semiconductor Device Research Symposium, ISDRS 2011

Conference

Conference2011 International Semiconductor Device Research Symposium, ISDRS 2011
CountryUnited States
CityCollege Park, MD
Period7/12/119/12/11

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