Improvement of oxide reliability in NAND flash memories using tight endurance cycling with shorter idling period

Shirota Riichiro, B. J. Yang, Y. Y. Chiu, Y. T. Wu, P. Y. Wang, J. H. Chang, M. Yano, M. Aoki, T. Takeshita, C. Y. Wang, I. Kurachi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

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Engineering & Materials Science