Improvement of oxide reliability in NAND flash memories using tight endurance cycling with shorter idling period

Shirota Riichiro, B. J. Yang, Y. Y. Chiu, Y. T. Wu, P. Y. Wang, J. H. Chang, M. Yano, M. Aoki, T. Takeshita, C. Y. Wang, I. Kurachi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

It has been newly found that shorter intervals between program and erase operations can suppress the oxide degradation more significantly in a 0.05 to 5 sec timeframe. Our new analysis clearly demonstrates the following degradation phenomena: a longer interval yields more trapped charges near the Si surface and surface states. Our results also indicate that the oxide degradation occurs more significantly during the erase-to-program interval than in the program-to-erase interval. These findings suggest that the erasing step causes a self-induced positive FG potential yields an accumulation of trapped holes near the Si surface and also generates surface states during the interval from erase-to-program. In addition, regarding retention characteristics, larger Vt shifts caused by the reduction of surface states and electron detrapping of oxide charges are observed in the longer interval. Based on these results, a new NAND operation scheme is proposed to improve reliability in shorter intervals.

Original languageEnglish
Title of host publication2015 IEEE International Reliability Physics Symposium, IRPS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesMY121-MY125
ISBN (Electronic)9781467373623
DOIs
StatePublished - 26 May 2015
EventIEEE International Reliability Physics Symposium, IRPS 2015 - Monterey, United States
Duration: 19 Apr 201523 Apr 2015

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2015-May
ISSN (Print)1541-7026

Conference

ConferenceIEEE International Reliability Physics Symposium, IRPS 2015
CountryUnited States
CityMonterey
Period19/04/1523/04/15

Keywords

  • endurance
  • FN-tunneling
  • NAND Flash
  • reliability
  • retention

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    Riichiro, S., Yang, B. J., Chiu, Y. Y., Wu, Y. T., Wang, P. Y., Chang, J. H., Yano, M., Aoki, M., Takeshita, T., Wang, C. Y., & Kurachi, I. (2015). Improvement of oxide reliability in NAND flash memories using tight endurance cycling with shorter idling period. In 2015 IEEE International Reliability Physics Symposium, IRPS 2015 (pp. MY121-MY125). [7112814] (IEEE International Reliability Physics Symposium Proceedings; Vol. 2015-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2015.7112814