Improvement of optical transmittance and electrical properties for the Si quantum dot-embedded Zno thin film

Kuang Yang Kuo, Chuan Cheng Liu, Pin Ruei Huang, Shu Wei Hsu, Wen Ling Chuang, You Jheng Chen, Po-Tsung Lee*

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

A Si quantum dot (QD)-embedded ZnO thin film is successfully fabricated on a p-type Si substrate using a ZnO/Si multilayer structure. Its optical transmittance is largely improved when increasing the annealing temperature, owing to the phase transformation from amorphous to nanocrystalline Si QDs embedded in the ZnO matrix. The sample annealed at 700°C exhibits not only high optical transmittance in the long-wavelength range but also better electrical properties including low resistivity, small turn-on voltage, and high rectification ratio. By using ZnO as the QDs' matrix, the carrier transport is dominated by the multistep tunneling mechanism, the same as in a n-ZnO/p-Si heterojunction diode, which clearly differs from that using the traditional matrix materials. Hence, the carriers transport mainly in the ZnO matrix, not through the Si QDs. The unusual transport mechanism using ZnO as matrix promises the great potential for optoelectronic devices integrating Si QDs.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalNanoscale Research Letters
Volume8
Issue number1
DOIs
StatePublished - 14 Nov 2013

Keywords

  • Si quantum dot
  • Transport mechanism
  • Zno thin film

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