Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers

Cheng-Huang Kuo*, C. M. Chen, C. W. Kuo, C. J. Tun, C. J. Pan, B. J. Pong, G. C. Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

The authors have demonstrated nitride-based near-ultraviolet (NUV) light emitting diodes (LEDs) with mesh indium tin oxide (ITO) contact layer. With 20 mA injection current, it was found that forward voltages were 3.94 and 4.05 V while the output powers were 7.54 and 9.02 mW for the planar ITO LED and mesh ITO LED, respectively. The larger LED output power should be attributed partially to the reduced absorption of ITO in the NUV region and partially to the better current spreading.

Original languageEnglish
Article number201104
JournalApplied Physics Letters
Volume89
Issue number20
DOIs
StatePublished - 23 Nov 2006

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