Improvement of low-temperature gate dielectric formed in N 2 O plasma by an additional CF 4 pretreatment process

Tzu Yun Chang*, Tan Fu Lei, Tien-Sheng Chao, Huang Chun Wen, Hsiao Wei Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


This study describes a novel technique to form low temperature oxide (<350°C). Low-temperature oxides were formed by N 2 O plasma in the plasma-enhanced chemical vapor deposition (PECVD) system with a CF 4 pretreatment. These oxides demonstrate excellent current-voltage (I-V) characteristics comparable to thermally grown oxides. Experimental results indicate that CF 4 plasma treatment can significantly improve the reliability of low-temperature oxides. With excellent electrical properties, the technique is highly promising for low-temperature processes.

Original languageEnglish
Pages (from-to)389-391
Number of pages3
JournalIEEE Electron Device Letters
Issue number7
StatePublished - 1 Jul 2002


  • Low-temperature oxide
  • Metal gate
  • N O/CF plasma
  • TDDB and GOI

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