Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography

H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, Hao-Chung Kuo, K. M. Leung, Tien-chang Lu, S. C. Wang

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Abstract

The enhancement of light extraction of gallium nitride (GaN)-based power chip (PC) light-emitting diodes (LEDs) with a p-GaN rough surface by nanoimprint lithography (NIL) is presented. At a driving current of 350 mA and a chip size of 1 mm × 1 mm, the light output power of the PC LEDs with a p-GaN rough surface (etching depth from 130 to 150 nm) showed an enhancement of 24% on wafer when compared with the same device without NIL. Current-voltage results indicated an ohmic contact by the increase in the contact area of the nano-roughened surface at 200 mA. This paper offers a promising potential for enhancing the output powers of commercial LEDs.

Original languageEnglish
Article number045022
Pages (from-to)1-4
Number of pages4
JournalSemiconductor Science and Technology
Volume23
Issue number4
DOIs
StatePublished - 1 Apr 2008

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