Improvement of kink characteristics performance of GaAs VCSEL with a indium-tin-oxide top transparent overcoating

Lai Fang-I. Lai, Ya Hsien Chang, T. H. Hsueh, H. W. Huang, L. H. Laih, Hao-Chung Kuo*, S. C. Wang, Tai Cheng Guung

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We demonstrated the enhancement in the performance of proton-implanted GaAs VCSEL by incorporation of a new p-contact scheme using a Ti and ITO transparent overcoating on the regular p-contact. The kink characteristics in light output power versus current (L-I) curve of the VCSEL with the Ti/ITO overcoating were improved with a reduction in the derivative kink factor of as large as 70%. The high-speed response of the overcoated device also shows a more open clear eye and lower jitter of 35 ps operating at 2.125 Gb/s under 10 mA bias and 9 dB extinction ratio compared to the no overcoated device. Better current spreading and uniformity induced by the overcoating could be responsible for these performance improvements.

Original languageEnglish
Pages (from-to)203-206
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume113
Issue number3
DOIs
StatePublished - 15 Nov 2004

Keywords

  • High-speed operation
  • Indium-Tin-Oxide
  • Kink
  • Proton implant
  • VCSEL

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