Improvement of junction leakage of nickel silicided junction by a Ti-capping layer

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Abstract

A novel NiSi process with a thin Ti-cap layer is proposed, for the first time, to improve the leakage problem of Ni-silicided junction. The Ti-cap samples exhibit a very low leakage current density about 1×10-9 A/cm2 after 600 °C annealing, which is one order of magnitude reduction comparing with uncapped samples. From Auger analyzes, it is found that this significant improvement results from suppression of the oxidation of the Ni-silicide during the thermal annealing process.

Original languageEnglish
Pages (from-to)572-573
Number of pages2
JournalIEEE Electron Device Letters
Volume20
Issue number11
DOIs
StatePublished - 1 Nov 1999

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