Improvement of interface properties of W/La2O3/Si MOS structure using Al capping layer

K. Tachi*, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

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Engineering & Materials Science