Improvement of interface properties of W/La2O3/Si MOS structure using Al capping layer

K. Tachi*, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

Electrical characteristics of W/La2O3/Si MOS capacitors have been investigated under various annealing condition. Relatively high interface state densities (Dit,) of 1012 cm -2eV-1 observed after annealing at 200 to 500 °C was effectively reduced down to 1011 cm-2eV-1 by using an Al capping layer in the annealing process. However, a trade off between high capacitance density and low Dit, has been observed in this method

Original languageEnglish
Title of host publicationECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
Pages191-198
Number of pages8
Edition4
DOIs
StatePublished - 2007
Event5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States
Duration: 8 Oct 200710 Oct 2007

Publication series

NameECS Transactions
Number4
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period8/10/0710/10/07

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