Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface

Hung Wen Huang*, C. C. Kao, J. T. Chu, Hao-Chung Kuo, S. C. Wang, C. C. Yu

*Corresponding author for this work

Research output: Contribution to journalArticle

117 Scopus citations

Abstract

This investigation describes the development of InGaN-GaN light-emitting diode (LED) with a nano-roughened top p-GaN surface which uses Ni nano-mask and wet etching. The light output of the InGaN-GaN LED with a nano-roughened top p-GaN surface is 1.4 times that of a conventional LED, and wall-plug efficiency is 45% higher. The operating voltage of InGaN-GaN LED was reduced from 3.65 to 3.5 V at 20 mA and the series resistance was reduced by 20%. The light output is increased by the nano-roughening of the top p-GaN surface. The reduction in the series resistance can be attributed to the increase in the contact area of nano-roughened surface.

Original languageEnglish
Pages (from-to)983-985
Number of pages3
JournalIEEE Photonics Technology Letters
Volume17
Issue number5
DOIs
StatePublished - 1 May 2005

Keywords

  • Gallium nitride (GaN)
  • Light-emitting diode (LED)
  • Nano-mask
  • Nickel

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