Improvement of hydrogenated amorphous-silicon TFT performances with low-κ siloxane-based hydrogen silsesquioxane (HSQ) passivation layer

Ta Shan Chang, Ting Chang Chang, Po-Tsun Liu, Tien Shan Chang, Chun Hao Tu, Feng Sheng Yeh

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

A low-dielectric-constant (low-κ)-material siloxanebased hydrogen silsesquioxane (HSQ) is investigated as a passivation layer in bottom-gate hydrogenated amorphous-silicon thin-film transistors (a-Si: H TFTs). The low-κ HSQ film passivated on TFT promotes the brightness and aperture ratio of TFT liquid-crystal display due to its high light transmittance and good planarization. In addition, the performance of a-Si: H TFT with HSQ passivation has been improved, compared to a conventional silicon nitride (SiNx)-passivated TFT because the hydrogen bonds of HSQ assist the hydrogen incorporation to eliminate the density of states between the back channel and passivation layer. Experimental results exhibit an improved field-effect mobility of 0.57 cm2/V · s and a subthreshold swing of 0.68 V.

Original languageEnglish
Pages (from-to)902-904
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number11
DOIs
StatePublished - 1 Nov 2006

Keywords

  • Low-dielectric constant
  • Passivation
  • Thin-film transistor (TFT)

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