Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs

Y. S. Chang, Hao-Chung Kuo, F. I. Lai, Y. A. Chang, L. H. Laih, S. C. Wang*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

9 Scopus citations

Abstract

We present in this paper the MOCVD growth and characterization of high performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior characteristics, with threshold currents ∼0.4 mA, and slope efficiencies ∼ 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than ∼30% when the substrate temperature is raised from room temperature to 85°C. These VCSELs also demonstrate high speed modulation bandwidth up to 12.5Gbit/s from 25°C to 85°C.

Original languageEnglish
Pages (from-to)221-226
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5364
DOIs
StatePublished - 16 Aug 2004
EventVertical-Cavity Surface-Emitting lasers VIII - San Jose, CA, United States
Duration: 28 Jan 200429 Jan 2004

Keywords

  • High speed
  • InGaAsP
  • MOCVD
  • Strain-compensated
  • VCSELs

Fingerprint Dive into the research topics of 'Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs'. Together they form a unique fingerprint.

Cite this