GaN-based light-emitting diode (LED) with SiO2 photonic crystals (PCs) structure made by holographic lithography on an indium-tin-oxide (ITO) film was fabricated. The PCs made on SiO2 but an ITO film both improves the light extraction efficiency of the GaN-based LED and prevents the sheet resistance increasing of the ITO film from the dry etching damage. It was found that the forward voltage at 20 mA of the GaN-based LED with SiO 2 PCs on an ITO film was 1.9% higher than the GaN-based LED with a planar ITO film only. The output power of GaN-based LED with SiO2 PCs on an ITO film at 20mA was 17.1%, 26.5% and 125.3% higher than that of the GaN-based LEDs with the planar SiO2/ITO, planar ITO or Ni/Au surface layers, respectively.
|Number of pages||3|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|State||Published - 1 Dec 2008|
|Event||7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States|
Duration: 16 Sep 2007 → 21 Sep 2007