Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC

Chun Hao Tu; Ting Chang Chang; Po-Tsun Liu; Che Yu Yang; Hsin Chou Liu; Wei Ren Chen; Yung Chun Wu; C. Y.Chun Ye Chang

doi:10.1109/LED.2006.870420

Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC

Chun Hao Tu^*, Ting Chang Chang, Po-Tsun Liu, Che Yu Yang, Hsin Chou Liu, Wei Ren Chen, Yung Chun Wu, C. Y.Chun Ye Chang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The fluorine ion implantation applied to the polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated in this letter. Experimental results have shown that fluorine ion implantation effectively minimized the trap state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, and high ON/OFF current ratio. Furthermore, the fluorine ions tended to segregate at the interface between the gate oxide and poly-Si layers during the excimer laser annealing, even without the extra deposition of pad oxide on the poly-Si film. The presence of fluorine obviously enhanced electrical reliability of poly-Si TFTs.

Original language	English
Pages (from-to)	262-264
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	4
DOIs	https://doi.org/10.1109/LED.2006.870420
State	Published - 1 Apr 2006

Keywords

Fluorine ion implantation
Polycrystalline silicon thin-film transistors (poly-Si TFTs)

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10.1109/LED.2006.870420

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title = "Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC",

abstract = "The fluorine ion implantation applied to the polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated in this letter. Experimental results have shown that fluorine ion implantation effectively minimized the trap state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, and high ON/OFF current ratio. Furthermore, the fluorine ions tended to segregate at the interface between the gate oxide and poly-Si layers during the excimer laser annealing, even without the extra deposition of pad oxide on the poly-Si film. The presence of fluorine obviously enhanced electrical reliability of poly-Si TFTs.",

keywords = "Fluorine ion implantation, Polycrystalline silicon thin-film transistors (poly-Si TFTs)",

author = "Tu, {Chun Hao} and Chang, {Ting Chang} and Po-Tsun Liu and Yang, {Che Yu} and Liu, {Hsin Chou} and Chen, {Wei Ren} and Wu, {Yung Chun} and Chang, {C. Y.Chun Ye}",

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doi = "10.1109/LED.2006.870420",

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AU - Tu, Chun Hao

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Yang, Che Yu

AU - Liu, Hsin Chou

AU - Chen, Wei Ren

AU - Wu, Yung Chun

AU - Chang, C. Y.Chun Ye

PY - 2006/4/1

Y1 - 2006/4/1

N2 - The fluorine ion implantation applied to the polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated in this letter. Experimental results have shown that fluorine ion implantation effectively minimized the trap state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, and high ON/OFF current ratio. Furthermore, the fluorine ions tended to segregate at the interface between the gate oxide and poly-Si layers during the excimer laser annealing, even without the extra deposition of pad oxide on the poly-Si film. The presence of fluorine obviously enhanced electrical reliability of poly-Si TFTs.

AB - The fluorine ion implantation applied to the polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated in this letter. Experimental results have shown that fluorine ion implantation effectively minimized the trap state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, and high ON/OFF current ratio. Furthermore, the fluorine ions tended to segregate at the interface between the gate oxide and poly-Si layers during the excimer laser annealing, even without the extra deposition of pad oxide on the poly-Si film. The presence of fluorine obviously enhanced electrical reliability of poly-Si TFTs.

KW - Fluorine ion implantation

KW - Polycrystalline silicon thin-film transistors (poly-Si TFTs)

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