Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC

Chun Hao Tu*, Ting Chang Chang, Po-Tsun Liu, Che Yu Yang, Hsin Chou Liu, Wei Ren Chen, Yung Chun Wu, C. Y.Chun Ye Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


The fluorine ion implantation applied to the polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated in this letter. Experimental results have shown that fluorine ion implantation effectively minimized the trap state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, and high ON/OFF current ratio. Furthermore, the fluorine ions tended to segregate at the interface between the gate oxide and poly-Si layers during the excimer laser annealing, even without the extra deposition of pad oxide on the poly-Si film. The presence of fluorine obviously enhanced electrical reliability of poly-Si TFTs.

Original languageEnglish
Pages (from-to)262-264
Number of pages3
JournalIEEE Electron Device Letters
Issue number4
StatePublished - 1 Apr 2006


  • Fluorine ion implantation
  • Polycrystalline silicon thin-film transistors (poly-Si TFTs)

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