Improvement of breakdown voltage characteristics of GaAs junction by damage-creation of ion-implantation

Yukiharu Shimamoto*, Tsuyoshi Tanaka, Keijiro Itakura, Daisuke Ueda

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have developed a technique which improves breakdown voltage of GaAs junction (Schottky or pn junction) by damage-creation of ion-implantation around the junction edge followed by appropriate annealing. Owing to the high-resistive region formed at the surface by ion-implantation, depletion layer is widened laterally in the region, so that the field intensity at the junction-edge is weakened. The technique allows us to obtain ideal characteristics of breakdown voltage. This paper reports the characterization of thus obtained diodes and the investigation of the ion-implantation effect.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by IOP Publishing Ltd
Pages199-202
Number of pages4
ISBN (Print)0854984100
StatePublished - 1 Dec 1991
EventProceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds - Seattle, WA, USA
Duration: 9 Sep 199112 Sep 1991

Publication series

NameInstitute of Physics Conference Series
Volume120
ISSN (Print)0951-3248

Conference

ConferenceProceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds
CitySeattle, WA, USA
Period9/09/9112/09/91

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  • Cite this

    Shimamoto, Y., Tanaka, T., Itakura, K., & Ueda, D. (1991). Improvement of breakdown voltage characteristics of GaAs junction by damage-creation of ion-implantation. In Institute of Physics Conference Series (pp. 199-202). (Institute of Physics Conference Series; Vol. 120). Publ by IOP Publishing Ltd.