Improvement of 1/f noise by using VHP (Vertical High Pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS

Hideki Kimijima*, Tatsuya Ohguro, Bob Evans, Bruce Acker, John Bloom, Hiroyuki Mabuchi, Dim Lee Kwong, Eiji Morifuji, Takashi Yoshitomi, Hisayo Sasaki Momose, Masaaki Kinugawa, Yasuhiro Katsumata, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

18 Scopus citations

Abstract

1/f noise in MOSFET using VHP(Vertical High Pressure) oxynitride gate insulator was studied. 1/f noise is degraded by conventional oxynitride gate insulator. It was found that 1/f noise can be improved by using VHP oxynitride gate insulator.

Original languageEnglish
Pages (from-to)119-120
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1999
EventProceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn
Duration: 14 Jun 199916 Jun 1999

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