Improvement of 1/f noise by using VHP (Vertical High Pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS

Hideki Kimijima; Tatsuya Ohguro; Bob Evans; Bruce Acker; John Bloom; Hiroyuki Mabuchi; Dim Lee Kwong; Eiji Morifuji; Takashi Yoshitomi; Hisayo Sasaki Momose; Masaaki Kinugawa; Yasuhiro Katsumata; Hiroshi Iwai

doi:10.1109/VLSIT.1999.799372

Improvement of 1/f noise by using VHP (Vertical High Pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS

Hideki Kimijima^*, Tatsuya Ohguro, Bob Evans, Bruce Acker, John Bloom, Hiroyuki Mabuchi, Dim Lee Kwong, Eiji Morifuji, Takashi Yoshitomi, Hisayo Sasaki Momose, Masaaki Kinugawa, Yasuhiro Katsumata, Hiroshi Iwai

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article

18 Scopus citations

Abstract

1/f noise in MOSFET using VHP(Vertical High Pressure) oxynitride gate insulator was studied. 1/f noise is degraded by conventional oxynitride gate insulator. It was found that 1/f noise can be improved by using VHP oxynitride gate insulator.

Original language	English
Pages (from-to)	119-120
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.1999.799372
State	Published - 1999
Event	Proceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn Duration: 14 Jun 1999 → 16 Jun 1999

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10.1109/VLSIT.1999.799372

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Cite this

Kimijima, H., Ohguro, T., Evans, B., Acker, B., Bloom, J., Mabuchi, H., Kwong, D. L., Morifuji, E., Yoshitomi, T., Sasaki Momose, H., Kinugawa, M., Katsumata, Y., & Iwai, H. (1999). Improvement of 1/f noise by using VHP (Vertical High Pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS. Digest of Technical Papers - Symposium on VLSI Technology, 119-120. https://doi.org/10.1109/VLSIT.1999.799372

Kimijima, Hideki ; Ohguro, Tatsuya ; Evans, Bob ; Acker, Bruce ; Bloom, John ; Mabuchi, Hiroyuki ; Kwong, Dim Lee ; Morifuji, Eiji ; Yoshitomi, Takashi ; Sasaki Momose, Hisayo ; Kinugawa, Masaaki ; Katsumata, Yasuhiro ; Iwai, Hiroshi. / Improvement of 1/f noise by using VHP (Vertical High Pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS. In: Digest of Technical Papers - Symposium on VLSI Technology. 1999 ; pp. 119-120.

@article{5e525a48dcb642f3958dcf72661ae89d,

title = "Improvement of 1/f noise by using VHP (Vertical High Pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS",

abstract = "1/f noise in MOSFET using VHP(Vertical High Pressure) oxynitride gate insulator was studied. 1/f noise is degraded by conventional oxynitride gate insulator. It was found that 1/f noise can be improved by using VHP oxynitride gate insulator.",

author = "Hideki Kimijima and Tatsuya Ohguro and Bob Evans and Bruce Acker and John Bloom and Hiroyuki Mabuchi and Kwong, {Dim Lee} and Eiji Morifuji and Takashi Yoshitomi and {Sasaki Momose}, Hisayo and Masaaki Kinugawa and Yasuhiro Katsumata and Hiroshi Iwai",

year = "1999",

doi = "10.1109/VLSIT.1999.799372",

language = "English",

pages = "119--120",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 14-06-1999 Through 16-06-1999",

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Kimijima, H, Ohguro, T, Evans, B, Acker, B, Bloom, J, Mabuchi, H, Kwong, DL, Morifuji, E, Yoshitomi, T, Sasaki Momose, H, Kinugawa, M, Katsumata, Y & Iwai, H 1999, 'Improvement of 1/f noise by using VHP (Vertical High Pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS', Digest of Technical Papers - Symposium on VLSI Technology, pp. 119-120. https://doi.org/10.1109/VLSIT.1999.799372

Improvement of 1/f noise by using VHP (Vertical High Pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS. / Kimijima, Hideki; Ohguro, Tatsuya; Evans, Bob; Acker, Bruce; Bloom, John; Mabuchi, Hiroyuki; Kwong, Dim Lee; Morifuji, Eiji; Yoshitomi, Takashi; Sasaki Momose, Hisayo; Kinugawa, Masaaki; Katsumata, Yasuhiro; Iwai, Hiroshi.

In: Digest of Technical Papers - Symposium on VLSI Technology, 1999, p. 119-120.

Research output: Contribution to journal › Conference article

TY - JOUR

T1 - Improvement of 1/f noise by using VHP (Vertical High Pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS

AU - Kimijima, Hideki

AU - Ohguro, Tatsuya

AU - Evans, Bob

AU - Acker, Bruce

AU - Bloom, John

AU - Mabuchi, Hiroyuki

AU - Kwong, Dim Lee

AU - Morifuji, Eiji

AU - Yoshitomi, Takashi

AU - Sasaki Momose, Hisayo

AU - Kinugawa, Masaaki

AU - Katsumata, Yasuhiro

AU - Iwai, Hiroshi

PY - 1999

Y1 - 1999

N2 - 1/f noise in MOSFET using VHP(Vertical High Pressure) oxynitride gate insulator was studied. 1/f noise is degraded by conventional oxynitride gate insulator. It was found that 1/f noise can be improved by using VHP oxynitride gate insulator.

AB - 1/f noise in MOSFET using VHP(Vertical High Pressure) oxynitride gate insulator was studied. 1/f noise is degraded by conventional oxynitride gate insulator. It was found that 1/f noise can be improved by using VHP oxynitride gate insulator.

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U2 - 10.1109/VLSIT.1999.799372

DO - 10.1109/VLSIT.1999.799372

M3 - Conference article

AN - SCOPUS:0033280526

SP - 119

EP - 120

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

SN - 0743-1562

Y2 - 14 June 1999 through 16 June 1999

ER -