1/f noise in MOSFET using VHP(Vertical High Pressure) oxynitride gate insulator was studied. 1/f noise is degraded by conventional oxynitride gate insulator. It was found that 1/f noise can be improved by using VHP oxynitride gate insulator.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1999|
|Event||Proceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn|
Duration: 14 Jun 1999 → 16 Jun 1999