Abstract
1/f noise in MOSFET using VHP(Vertical High Pressure) oxynitride gate insulator was studied. 1/f noise is degraded by conventional oxynitride gate insulator. It was found that 1/f noise can be improved by using VHP oxynitride gate insulator.
Original language | English |
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Pages (from-to) | 119-120 |
Number of pages | 2 |
Journal | Digest of Technical Papers - Symposium on VLSI Technology |
DOIs | |
State | Published - 1999 |
Event | Proceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn Duration: 14 Jun 1999 → 16 Jun 1999 |