Improvement of 1/f noise by using VHP (Vertical High Pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS

Hideki Kimijima*, Tatsuya Ohguro, Bob Evans, Bruce Acker, John Bloom, Hiroyuki Mabuchi, Dim Lee Kwong, Eiji Morifuji, Takashi Yoshitomi, Hisayo Sasaki Momose, Masaaki Kinugawa, Yasuhiro Katsumata, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalConference article

18 Scopus citations

Abstract

1/f noise in MOSFET using VHP(Vertical High Pressure) oxynitride gate insulator was studied. 1/f noise is degraded by conventional oxynitride gate insulator. It was found that 1/f noise can be improved by using VHP oxynitride gate insulator.

Original languageEnglish
Pages (from-to)119-120
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1999
EventProceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn
Duration: 14 Jun 199916 Jun 1999

Cite this

Kimijima, H., Ohguro, T., Evans, B., Acker, B., Bloom, J., Mabuchi, H., Kwong, D. L., Morifuji, E., Yoshitomi, T., Sasaki Momose, H., Kinugawa, M., Katsumata, Y., & Iwai, H. (1999). Improvement of 1/f noise by using VHP (Vertical High Pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS. Digest of Technical Papers - Symposium on VLSI Technology, 119-120. https://doi.org/10.1109/VLSIT.1999.799372