Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment

Kuan Chang Chang, Jung Hui Chen, Tsung Ming Tsai, Ting Chang Chang*, Syuan Yong Huang, Rui Zhang, Kai Huang Chen, Yong En Syu, Geng Wei Chang, Tian Jian Chu, Guan Ru Liu, Yu Ting Su, Min Chen Chen, Jhih Hong Pan, Kuo Hsiao Liao, Ya-Hsiang Tai, Tai Fa Young, Simon M. Sze, Chi Fong Ai, Min Chuan WangJen Wei Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

We demonstrated that the supercritical CO2 fluid treatment was a new concept to efficiently reduce the operation current of resistance random access memory. The dangling bonds of tin-doped silicon oxide (Sn:SiOx) thin film were passivated by the hydration-dehydration reaction through supercritical CO2 fluid treatment, which was verified by the XPS and FTIR analyses. The current conduction mechanism of low resistance state in post-treated Sn:SiOx thin film was transferred to hopping conduction from Ohmic conduction. Furthermore, the current conduction mechanism of high resistance state in the memory device was transferred to Schottky emission from Frenkel-Poole conduction. The phenomena were attributed to the discontinuous metal filament formed by hydration-dehydration reaction in Sn:SiOx thin film through supercritical fluid treatment. Finally, a reaction model was proposed to explain the mechanism of current reduction in Sn:SiOx thin film with supercritical CO2 fluid treatment. Crown

Original languageEnglish
Pages (from-to)183-189
Number of pages7
JournalJournal of Supercritical Fluids
Volume85
DOIs
StatePublished - 1 Jan 2014

Keywords

  • Hydration-dehydration reaction
  • RRAM
  • Supercritical fluid
  • Tin doping

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