Improvement in retention time of metal-ferroelectric-metal-insulator-semiconductor structures using MgO doped Ba0.7Sr0.3TiO3 insulator layer

Tseung-Yuen Tseng*, S. Y. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Improvement in retention time of metal-ferroelectric-metal-insulator-semiconductor structures using MgO doped Ba07Sr03TiO3 insulator layer was discussed. The films were deposited by metalorganic decomposition method. The ratio of remanent polarization to saturation polarization was also investigated. A large memory window of 3.1 V was obtained.

Original languageEnglish
Pages (from-to)981-983
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number5
DOIs
StatePublished - 4 Aug 2003

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