Improvement in pH sensitivity of low-temperature polycrystalline-silicon thin-film transistor sensors using H2 sintering

Li Chen Yen, Ming Tsyr Tang, Fang Yu Chang, Tung Ming Pan*, Tien-Sheng Chao, Chiang Hsuan Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

In this article, we report an improvement in the pH sensitivity of low-temperature polycrystalline-silicon (poly-Si) thin-film transistor (TFT) sensors using an H2 sintering process. The low-temperature polycrystalline-silicon (LTPS) TFT sensor with H2 sintering exhibited a high sensitivity than that without H2 sintering. This result may be due to the resulting increase in the number of Si-OH2+ and Si-O- bonds due to the incorporation of H in the gate oxide to reduce the dangling silicon bonds and hence create the surface active sites and the resulting increase in the number of chemical reactions at these surface active sites. Moreover, the LTPS TFT sensor device not only offers low cost and a simple fabrication processes, but the technique also can be extended to integrate the sensor into other systems.

Original languageEnglish
Pages (from-to)3825-3832
Number of pages8
JournalSensors (Switzerland)
Volume14
Issue number3
DOIs
StatePublished - 25 Feb 2014

Keywords

  • H sintering
  • Low-temperature polycrystalline-silicon (poly-Si)
  • PH sensitivity
  • Thin-film transistors (TFTs)

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